A Novel Combinatorial Approach to the Ferroelectric Properties in Hf x Zr 1− x O 2 Deposited by Atomic Layer Deposition-Reference-Cited by-同舟云学术

A Novel Combinatorial Approach to the Ferroelectric Properties in Hf x Zr 1− x O 2 Deposited by Atomic Layer Deposition

Published:2021-04 Issue:5 Volume:15 Page:2100053
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Jung Yong Chan¹^ORCID,Mohan Jaidah¹,Hwang Su Min¹,Kim Jin-Hyun¹,Le Dan N.¹,Sahota Akshay²,Kim Namhoon¹³,Hernandez-Arriaga Heber¹,Veyan Jean-Francois¹,Kim Harrison Sejoon¹,Kim Si Joon⁴⁵,Choi Rino⁶,Kim Jiyoung¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering The University of Texas at Dallas 800 West Campbell Road Richardson Texas 75080 USA

2. Department of Electrical Engineering The University of Texas at Dallas 800 West Campbell Road Richardson Texas 75080 USA

3. Department of Electrical Engineering Inha University 100 Inha-ro Michuhol-gu Incheon 22212 Republic of Korea

4. Department of Electrical and Electronics Engineering Kangwon National University 1 Gangwondaehakgil Chuncheon-si Gangwon-do 24341 Republic of Korea

5. Interdisciplinary Graduate Program in BIT Medical Convergence Kangwon National University 1 Gangwondaehakgil Chuncheon-si Gangwon-do 24341 Republic of Korea

6. Department of Materials Science and Engineering Inha University 100 Inha-ro Michuhol-gu Incheon 22212 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100053

Reference40 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in Gd-Doped HfO2Thin Films

3. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

4. Ferroelectricity in yttrium-doped hafnium oxide

5. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

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