Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe 1− x Te x Thin Films-Reference-Cited by-同舟云学术

Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe 1− x Te x Thin Films

Published:2020-11-20 Issue:3 Volume:15 Page:2000451
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Tomelleri Martina¹²,Hippert Françoise³,Farjot Thierry¹,Licitra Christophe¹,Vaxelaire Nicolas¹,Dory Jean-Baptiste¹,Benoit Daniel²,Giordano Valentina⁴,Noé Pierre¹^ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, LETI Grenoble F-38000 France

2. STMicroelectronics 850 Rue Jean Monnet F-38920 Crolles France

3. Université Grenoble Alpes, CNRS, Grenoble INP, LMGP Grenoble F-38000 France

4. ILM, UMR 5306 Univ. Lyon 1-CNRS Villeurbanne Cedex F-69622 France

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000451

Reference37 articles.

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5. Electronic and atomic structure of Ge2Sb2Te5 phase change memory material

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