Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO 2 and Al 2 O 3 /SiO 2 Gate Dielectrics

Author:

Jang Younjin1,Kim Jun Shik1,Kang Sukin1,Kim Jihun1,Lee Yonghee1,Kim Kwangmin2,Kim Whayoung1,Choi Heenang3,Kim Nayeon3,Eom Taeyong3,Chung Taek-Mo3,Jeon Woojin4,Lee Sang Yoon5,Hwang Cheol Seong1ORCID

Affiliation:

1. Department of Materials Science and Engineering Inter-University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea

2. Graduate School of Engineering Practice Seoul National University Seoul 08826 Republic of Korea

3. Thin Film Materials Research Center Korea Research Institute of Chemical Technology Daejeon 34114 Republic of Korea

4. Department of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin 17104 Republic of Korea

5. Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea

Funder

Samsung Advanced Institute of Technology

National Research Foundation of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

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