Photoluminescence Kinetics of Dark and Bright Excitons in Atomically Thin MoS 2
Author:
Affiliation:
1. Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russia
2. FG Nanotechnologie Institut für Mikro- und Nanotechnologien MacroNano® und Institut für Mikro- und Nanoelektronik, TU Ilmenau Postfach 100565 Ilmenau 98693 Germany
Funder
Russian Science Foundation
Deutscher Akademischer Austauschdienst
Carl-Zeiss-Stiftung
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100263
Reference90 articles.
1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
2. Transition metal dichalcogenides: structural, optical and electronic property tuning via thickness and stacking
3. Exciton dynamics in monolayer transition metal dichalcogenides
4. Experimental Evidence for Dark Excitons in MonolayerWSe2
5. Atomically ThinMoS2: A New Direct-Gap Semiconductor
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3. Effect of Strain on the Fine Structure of Exciton States in Atomically Thin Transition Metal Dichalcogenides;Bulletin of the Russian Academy of Sciences: Physics;2023-12
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