Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory-Reference-Cited by-同舟云学术

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Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Published:2021-04-19 Issue:6 Volume:15 Page:2100050
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Mahato Bipul Kumar¹^ORCID,Medwal Rohit¹,Deen Ghulam Roshan²,Piramanayagam S. N.³,Rawat Rajdeep Singh¹

Affiliation:

1. Natural Science and Science Education National Institute of Education Nanyang Technological University 1 Nanyang Walk Singapore 637616 Singapore

2. Medicinal and Pharmaceutical Chemistry School of Medicine RCSI-Bahrain Adliya Bahrain

3. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100050

Reference29 articles.

1. Polymer-Based Resistive Memory Materials and Devices

2. Stimuli-Responsive Cationic Hydrogels in Drug Delivery Applications

3. Phase-change materials for rewriteable data storage

4. Phase-Change and Redox-Based Resistive Switching Memories

5. Review of radiation effects on ReRAM devices and technology

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NDR effect and negative-set/reset phenomenon in core-shell structure-based memristor under the effect of humidity;Materials Science and Engineering: B;2024-01

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