Ge2Sb2Te5 Thin Film as a Promising Heat‐Mode Resist for High‐Resolution Direct Laser Writing Lithography

Author:

Chen Xingwang1,Chen Lei1,Sun Lihao1,Wei Tao12ORCID,Ling Yun13,Hu Jing1,Cheng Miao1,Liu Qianqian1,Wang Ruirui1,Li Wanfei1,Liu Bo1

Affiliation:

1. Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou Jiangsu 215009 China

2. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

3. School of Electronic & Information Engineering Suzhou University of Science and Technology Suzhou Jiangsu 215009 China

Abstract

Ge2Sb2Te5 thin film is investigated as a positive heat‐mode resist and environmentally friendly FeCl3 solution is as means an efficient developer. The corrosion selectivity of exposed to as‐deposited thin film reaches 2.3 and the etching selectivity of Si to Ge2Sb2Te5 thin film is as high as 15.75. Moreover, high‐resolution nanostructures with minimum linewidth of 180 nm and period of 400 nm are obtained along with high resolution of 130 nm. In addition, the mechanism of corrosion selectivity between as‐deposited and exposed thin film is further elucidated based on microstructural analysis. Hence, Ge2Sb2Te5 thin film is a promising positive resist for high‐resolution direct laser writing lithography.

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

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