Ferroelectric La‐Doped ZrO 2 /Hf x Zr 1− x O 2 Bilayer Stacks with Enhanced Endurance-Reference-Cited by-同舟云学术

Ferroelectric La‐Doped ZrO 2 /Hf x Zr 1− x O 2 Bilayer Stacks with Enhanced Endurance

Published:2021-02-26 Issue:5 Volume:15 Page:2100033
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Popovici Mihaela¹,Walke Amey M.¹,Banerjee Kaustuv¹,Ronchi Nicolo¹,Meersschaut Johan¹,Celano Umberto¹²,McMitchell Sean¹,Spampinato Valentina¹,Franquet Alexis¹,Favia Paola¹,Swerts Johan¹,Van den Bosch Geert¹,Van Houdt Jan¹³^ORCID

Affiliation:

1. STS IMEC Kapeldreef 75 Leuven 3001 Belgium

2. Faculty of Science and Technology University of Twente P.O. Box 217 7500 AE Enschede The Netherlands

3. Semiconductor Physics Physics and Astronomy – KU Leuven Celestijnenlaan 200d - box 2417 3001 Leuven Belgium

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100033

Reference23 articles.

1. Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

2. Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2

3. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

4. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

5. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

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