Quantum Kinetic Transport under High Electric Fields

Author:

Sano Nobuyuki12,Yoshii Akira1

Affiliation:

1. NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

2. Institute of Applied Physics, University of Tsukuba, lbaraki, Tsukuba 305, Japan

Abstract

Quantum kinetic transport under high electric fields is investigated with emphasis on the intracollisional field effect (ICFE) in low-dimensional structures. It is shown that the ICFE in GaAs one-dimensional quantum wires is already significant under moderate electric field strengths (≥ a few hundreds V/cm). This is a marked contrast to the cases in bulk, where the ICFE is expected to be significant under extremely strong electric fields (≥ MV/cm). Employing the Monte Carlo method including the ICFE, the electron drift velocity in quantum wires is shown to be much smaller than that expected from earlier investigations.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Intra-collisional field effect in one-dimensional GaN nanowires;Japanese Journal of Applied Physics;2019-05-20

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