Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

Abstract

We report the obtaining of electroluminescent devices (ELD) from porous silicon (PS) and indium doped zinc oxide (ZnO:In) junctions. PS presented photoluminescence (PL) in the visible region of the electromagnetic spectrum. ZnO:In thin film was obtained by dip coating technique. SEM images and IR measurements showed the incorporation of the ZnO:In in the PS structure. Once obtained, the device was optically and electrically characterized. The ELD showed emission in the visible (450–850 nm) and infrared region (900–1200 nm) where it was electrically polarized. The visible emission was detected as luminescent spots on the surface. Electrical characterization was carried out by current-voltage (I-V) curves. The I-V curves showed rectifying behavior. It was related to the quenching of the EL with the process that takes place in the PS when it was immersed in the precursor solution of the ZnO:In.