GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing-Reference-Cited by-同舟云学术

GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

Published:2015-02-02 Issue: Volume:2015 Page:1-8
ISSN:1687-6393
Container-title:Advances in Optical Technologies
language:en
Short-container-title:Advances in Optical Technologies

Author:

Kim Jun Hyoung¹,Kawazoe Tadashi¹²,Ohtsu Motoichi¹²

Affiliation:

1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

2. Nanophotonic Research Center, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

Abstract

By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.

Funder

Japan Society for the Promotion of Science

Publisher

Hindawi Limited

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://downloads.hindawi.com/archive/2015/236014.pdf

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