Affiliation:
1. Laboratorium voor Elektronika en Meettechniek, Sint-Pietersnieuwstraat 41, Gent B-9000, Belgium
Abstract
Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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