A Survey on Generalized Topological Indices for Silicon Carbide Structure

Author:

Alam Sajid Mahboob1,Jarad Fahd234ORCID,Mahboob Abid5ORCID,Siddique Imran6ORCID,Altunok Taner7,Waheed Rasheed Muhammad5

Affiliation:

1. Department of Mathematics, Minhaj University, Lahore, Pakistan

2. Department of Mathematics, Cankaya University, Etimesgut, Ankara, Turkey

3. Department of Mathematics, King Abdulaziz University, Jeddah, Saudi Arabia

4. Department of Medical Research, China Medical University Hospital, China Medical University, Taichung, Taiwan

5. Department of Mathematics, Division of Science and Technology, University of Education, Lahore, Pakistan

6. Department of Mathematics, University of Management and Technology, Lahore 54770, Pakistan

7. Department of Industrial Engineering, Konya Food and Agriculture University, Meram, Konya, Turkey

Abstract

The application of graphs in chemical and molecular structures has exponentially increased during the last few years. Topological indices facilitate the collection of beneficial information and provide an approach to understanding the properties of chemical structure by providing information about algebraic graphs. Let G be a graph with u -vertices and Ω u be the degree of u t h vertex. In this manuscript, we compute Zagreb index (ZI), first, and second, Hyper F-indices and sum and product connectivity of F-index of silicon carbides, namely, SiC4 – I[r, s] and SiC4 – II[r, s].

Publisher

Hindawi Limited

Subject

General Chemistry

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