Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures-Reference-Cited by-同舟云学术

Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

Published:2011-01-11 Issue: Volume:2011 Page:1-5
ISSN:2090-3561
Container-title:Smart Materials Research
language:en
Short-container-title:Smart Materials Research

Author:

Bravina S. L.¹,Morozovsky N. V.¹,Costecalde J.²,Soyer C.²,Remiens D.²,Deresmes D.²

Affiliation:

1. Institute of Physics, NASU 46, Prospect Nauki, 03680 Kyiv, Ukraine

2. IEMN-DOAE-MIMM Team, CNRS, UMR 8520, Bat. P3, Cité Scientifique USTL, 59652 Villeneuve d’Ascq, France

Abstract

The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed by piezoresponse force microscopy. The comparison of the dependences of introduced asymmetry factors for the bipolar charge-voltage and current-voltage loops and unipolar current-voltage curves on drive voltage indicates the interconnection of ferroelectric and electrical space charge transfer asymmetries.

Publisher

Hindawi Limited

Link

http://downloads.hindawi.com/archive/2011/374915.pdf

Reference8 articles.

1. PYROELECTRIC CHARACTERIZATION OF HYSTERESIS PHENOMENA ASYMMETRY IN PZT FILM ON SILICON STRUCTURES

2. Examination of Operation of PZT-Film–Si-Substrate Structures as Pyroactive Memory Elements

3. Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation

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