Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

Author:

Littlejohns Callum G.12,Dominguez Bucio Thalia2,Nedeljkovic Milos2,Wang Hong1,Mashanovich Goran Z.2,Reed Graham T.2,Gardes Frederic Y.2

Affiliation:

1. Silicon Technologies Centre of Excellence, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

2. Optoelectronics Research Centre, Building 53, University of Southampton, Southampton SO17 1BJ, UK

Abstract

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

Funder

National Research Foundation of Singapore

Publisher

Hindawi Limited

Subject

General Engineering,General Materials Science

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications;Journal of Physics Communications;2019-07-01

2. Development trends in silicon photonics for data centers;Optical Fiber Technology;2018-08

3. Natural Carbonation of Alkali-Activated Fly Ash and Slag Pastes;High Tech Concrete: Where Technology and Engineering Meet;2017-08-06

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