Interfacial misfit of zinc oxide films deposited on Si (100), (110) and (111) substrates-Reference-Cited by-同舟云学术

Interfacial misfit of zinc oxide films deposited on Si (100), (110) and (111) substrates

Published:2014-07 Issue:sup4 Volume:18 Page:S4-642-S4-645
ISSN:1432-8917
Container-title:Materials Research Innovations
language:en
Short-container-title:Materials Research Innovations

Author:

Cao S. P.¹,Ye F.¹²,Xu A. Y.¹,Bai F. M.³

Affiliation:

1. School of Material Science and EngineeringDalian University of Technology, 2 Linggong Road, Dalian 116024, China

2. Key Laboratory of Materials Modification by LaserIon, and Electron Beams, Dalian University of Technology, Ministry of Education, 2 Ling gong Road, Dalian 116024, China

3. State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China, Chengdu 610054, China

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1179/1432891714Z.000000000843

Reference15 articles.

1. Improving efficiency of organic light-emitting diodes fabricated utilizing AZO/Ag/AZO multilayer electrode

2. Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor Deposition

3. Electrical and optical properties of zinc oxide thin films prepared by rf magnetron sputtering for transparent electrode applications

4. Characterization of rf‐sputtered SnOxthin films by electron microscopy, Hall‐effect measurement, and Mössbauer spectrometry

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