Photoreflectance characterisation of Ar + ion etched and SiCI4reactive ion etched silicon (100)-Reference-Cited by-同舟云学术

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Photoreflectance characterisation of Ar + ion etched and SiCI4reactive ion etched silicon (100)

Published:1997-11 Issue:11 Volume:13 Page:961-964
ISSN:0267-0836
Container-title:Materials Science and Technology
language:en
Short-container-title:Materials Science and Technology

Author:

Murtagh M.,Lynch S. M.,Kelly P. V.,Hildebrandt S.,Herbert P. A. F.,Jeynes C.,Crean G. M.

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1179/mst.1997.13.11.961

Reference8 articles.

1. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

2. Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates

3. Piezo-optical Evidence forΛTransitions at the 3.4-eV Optical Structure of Silicon

4. Photoreflectance characterization of semiconductors and semiconductor heterostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate;Japanese Journal of Applied Physics;2014-01-01

2. Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy;Japanese Journal of Applied Physics;2011-08-22

3. Estimation of defect generation probability in thin Si surface damaged layer during plasma processing;Thin Solid Films;2008-08

4. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices;Journal of Physics D: Applied Physics;2008-01-04

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