Joining of Individual Silicon Carbide Nanowires Via Proton Beam Irradiation

Abstract

Background: Joining nanosized building blocks is a promising approach to fabricate functional nanodevices and nanosystems. Nanojoining approach also helps in integrating these nanodevices and nanosystems for the miniaturization of devices. The nanodevices are mainly fabricated by joining metallic and semiconductor nanowires/nanotubes. Objective: Silicon Carbide Nanowires (SiC-NWs) have become important nanomaterials for future nanoscale devices due to their unique physical properties. Method: In this paper, nanowelding of SiC-NWs has been demonstrated using ion beam technology. SiC-NWs were irradiated by 5 MeV proton beam as per SRIM code simulation. Nanojoining of SiC-NWs was confirmed by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Conclusion: Joining of individual SiC-NWs by 5 MeV proton beam irradiation was successfully achieved at the contact point as X-, Y-, II-, and T-shaped welded junctions.