Affiliation:
1. Tel-Aviv University, Tel-Aviv, Israel
Abstract
Flash memory is a type of electrically-erasable programmable read-only memory (EEPROM). Because flash memories are nonvolatile and relatively dense, they are now used to store files and other persistent objects in handheld computers, mobile phones, digital cameras, portable music players, and many other computer systems in which magnetic disks are inappropriate. Flash, like earlier EEPROM devices, suffers from two limitations. First, bits can only be cleared by erasing a large block of memory. Second, each block can only sustain a limited number of erasures, after which it can no longer reliably store data. Due to these limitations, sophisticated data structures and algorithms are required to effectively use flash memories. These algorithms and data structures support efficient not-in-place updates of data, reduce the number of erasures, and level the wear of the blocks in the device. This survey presents these algorithms and data structures, many of which have only been described in patents until now.
Publisher
Association for Computing Machinery (ACM)
Subject
General Computer Science,Theoretical Computer Science
Reference38 articles.
1. Assar M. Nemazie S. and Estakhri P. 1996. Flash memory mass storage architecture incorporation wear leveling technique without using CAM cells. US patent 5 485 595. Filed October 4 1993; Issued January 16 1996; Assigned to Cirrus Logic.]] Assar M. Nemazie S. and Estakhri P. 1996. Flash memory mass storage architecture incorporation wear leveling technique without using CAM cells. US patent 5 485 595. Filed October 4 1993; Issued January 16 1996; Assigned to Cirrus Logic.]]
2. Axis Communications. 2004. JFFS home page. Lund Sweden. Available at http://developer.axis.com/software/jffs/.]] Axis Communications. 2004. JFFS home page. Lund Sweden. Available at http://developer.axis.com/software/jffs/.]]
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