A 25-dBm 1-GHz Power Amplifier Integrated in CMOS 180nm for Wireless Power Transferring-Reference-Cited by-同舟云学术

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A 25-dBm 1-GHz Power Amplifier Integrated in CMOS 180nm for Wireless Power Transferring

Published:2015-08-31 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 28th Symposium on Integrated Circuits and Systems Design
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Author:

Cabrera Fabian L.¹,de Sousa F. Rangel¹

Affiliation:

1. Radiofrequency Laboratory, Federal University of Santa Catarina, Florianópolis-SC, 88040-900, Brazil

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Instituto Nacional de Ciência eTecnologia em Nano e Microtecnologias

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/2800986.2800989

Reference10 articles.

1. A 25 dBm Outphasing Power Amplifier With Cross-Bridge Combiners

2. A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS

3. A 2.45-GHz $+$20-dBm Fast Switching Class-E Power Amplifier With 43% PAE and a 18-dB-Wide Power Range in 0.18-$\mu \hbox{m}$ CMOS

4. Analysis and Design of Fully Integrated High-Power Parallel-Circuit Class-E CMOS Power Amplifiers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Test strategy for a 25-dBm 1-GHz CMOS power amplifier in a wireless power transfer context;International Journal of Electronics;2020-07-23

2. A Bridged Contactless Measurement Technique for LC Tank Based Voltage-Controlled Oscillator;Journal of Electronic Testing;2017-03-28

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