An Analysis and Design of 0.3-10 GHz Medium Power Amplifier using 0.5 μm GaAs PHEMT Technology-Reference-Cited by-同舟云学术

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An Analysis and Design of 0.3-10 GHz Medium Power Amplifier using 0.5 μm GaAs PHEMT Technology

Published:2017-07-26 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the International Conference on Imaging, Signal Processing and Communication
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Author:

Marzuki Arjuna¹,Rasmi Amiza²,Saibon Basir³

Affiliation:

1. School of Electrical and Electronic Eng, Universiti Sains Malaysia, Malaysia

2. TM Research & Development Sdn. Bhd., TM Innovation Centre, Lingkaran Teknokrat Timur, Malaysia

3. RF Microelectronics Lab, UniKL MSI Kulim Hi-Tech Park Campus, Malaysia

Funder

Ministry of Higher Education, Malaysia

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3132300.3132338

Reference11 articles.

1. A compact broadband stacked medium power amplifier in standard 65 nm CMOS technology

2. Simplification of millimeter-wave radio-over-fiber system employing heterodyning of uncorrelated optical carriers and self-homodyning of RF signal at the receiver;Razibul Islam A. H. M.;Optics Express.,2012

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