Hot-electron transport in 3-terminal devices based on magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Hot-electron transport in 3-terminal devices based on magnetic tunnel junctions

Published:2002-12 Issue:6 Volume:60 Page:896-902
ISSN:0295-5075
Container-title:Europhysics Letters (EPL)
language:
Short-container-title:Europhys. Lett.

Author:

Lacour D,Hehn M,Montaigne F,Jaffrès H,Rottländer P,Rodary G,Dau F. Nguyen Van,Petroff F,Schuhl A

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/epl/i2002-00302-7/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material considerations for the design of 2D/3D hot electron transistors;APL Materials;2021-08-01

2. Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors;Applied Physics Letters;2007-04-16

3. Low-resistance magnetic tunnel junctions with anMgO−Al2O3composite tunnel barrier: Asymmetric transport characteristics and free electron modeling of a self-limited oxidation bilayer;Physical Review B;2006-03-24

4. Evidence for hot electron magnetocurrent in a double barrier tunnel junction device;Applied Physics Letters;2005-12-05

5. Origin of large magnetocurrent in three-terminal double-barrier magnetic tunnel junctions;Journal of Applied Physics;2005-05-15

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