Stable structure and effects of the substrate Ti pre-treatment on the epitaxial growth of SrTiO 3 on GaAs-Reference-Cited by-同舟云学术

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Stable structure and effects of the substrate Ti pre-treatment on the epitaxial growth of SrTiO 3 on GaAs

Published:2009-05-01 Issue:4 Volume:86 Page:46008
ISSN:0295-5075
Container-title:EPL (Europhysics Letters)
language:
Short-container-title:Europhys. Lett.

Author:

Wang Jianli,Wu X. S.,Bai Dongmei

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/0295-5075/86/46008/pdf

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices;Advanced Functional Materials;2019-07-22

2. Stability and band offsets between GaAs semiconductor and CeO2 gate dielectric;AIP Advances;2019-02

3. Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric;Journal of Applied Physics;2018-03-21

4. Atomic-scale structural and electronic properties of SrTiO3/GaAs interfaces: A combined STEM-EELS and first-principles study;Physical Review B;2017-07-26

5. The structure and electronic properties of Ge/SrZrO 3;Vacuum;2016-08

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