Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation-Reference-Cited by-同舟云学术

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Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

Published:2006 Issue: Volume:4 Page:174-179
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Ohta Akio¹,Nakagawa Hiroshi¹,Murakami Hideki¹,Higashi Seiichirou¹,Miyazaki Seiichi¹

Affiliation:

1. Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/4/0/4_0_174/_pdf

Reference8 articles.

1. [1] C. O. Chui, et al., IEEE IEDM 2003 Technical Digest, pp. 437-440, 2003.

2. [2] Krishna. C. Saraswat, et al., Ext. Abst. SSDM 2004 pp. 718-719.

3. Photoelectron yield spectroscopy of electronic states at ultrathin interfaces

4. Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

5. Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy

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