Interface Investigation of High-Temperature-Annealed Ultrathin-ALD-Al<sub>2</sub>O<sub>3</sub>/InAlN Structures-Reference-Cited by-同舟云学术

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Interface Investigation of High-Temperature-Annealed Ultrathin-ALD-Al₂O₃/InAlN Structures

Published:2014 Issue:0 Volume:12 Page:83-88
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Akazawa Masamichi¹,Nakano Takuma¹

Affiliation:

1. Research Center for Integrated Quantum Electronics, Hokkaido University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/12/0/12_83/_pdf

Reference33 articles.

1. [1] J. Kuzmík, IEEE Electron. Device Lett. 22, 510 (2001).

2. [2] M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, Appl. Phys. Lett. 89, 062106 (2006).

3. [3] M. Hiroki, N. Maeda, and T. Kobayashi, Appl. Phys. Express 1, 111102 (2008).

4. [4] M. Higashiwaki and T. Matsui, Jpn. J. Appl. Phys. 43, L768 (2004).

5. [5] J. Kuzmík, A. Kostopoulos, G. Konstantinidis, J.-F. Carlin, A. Georgakilas, and D. Pogany, IEEE Electron. Device Lett. 53, 422 (2006).

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