Electrolessly deposited diffusion barriers for microelectronics-Reference-Cited by-同舟云学术

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Electrolessly deposited diffusion barriers for microelectronics

Published:1998-09 Issue:5 Volume:42 Page:607-620
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

O'Sullivan E. J.,Schrott A. G.,Paunovic M.,Sambucetti C. J.,Marino J. R.,Bailey P. J.,Kaja S.,Semkow K. W.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5389287/05389295.pdf?arnumber=5389295

Cited by 127 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cobalt layer prepared on copper using galvanic replacement as an alternative to palladium for activating electroless Ni–P plating;Journal of Applied Electrochemistry;2024-07-22

2. Cobalt layer prepared on copper using galvanic replacement as an alternative to palladium for activating electroless Ni-P plating;2024-04-24

3. Micromechanical response of an electrodeposited NiP metallic glass by pillar compression under extreme conditions;Materials Science and Engineering: A;2024-04

4. Formation of a Controllable Diffusion Barrier Layer on the Surface of Polydimethylsiloxane Films by Infrared Laser Irradiation;ACS Applied Materials & Interfaces;2024-01-30

5. Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications;Micromachines;2023-05-29

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