Glass transition and crystallization of Se95Te5 chalcogenide glassy semiconductor

Abstract

The study is dedicated to the investigation of thermo-physical characteristics of Se95Te5 chalcogenide glassy semiconductor during its glass formation and crystallization processes, employing various scanning rates of 5, 10, 15 and 20 K/min in non-isothermal modes through DSC measurement. Analysis of the structural relaxation kinetics involves the Kissinger’s, Augis and Bennett's, as well as Matusita’s approaches. Experimental data yield contains the determination of crucial parameters such as glass transition (𝑇𝑇𝑔𝑔), crystallization(𝑇𝑇𝑐𝑐), and melting temperatures alongside factors like reduced temperature of glass transition (𝑇𝑇𝑟𝑟𝑟𝑟), Hruby’s parameter (𝐾𝐾𝑔𝑔𝑔𝑔), fragility index (𝐹𝐹𝑖𝑖), Avrami exponents (n, m), glass transition (140.24 kJ/mol) and crystallization (Ec = 95.11 kJ/mol) energies, respectively. The results confirm that Se95Te5 chalcogenide system as an efficient glass former. Matusita’s method reveals that the crystallization mechanism (n = 2.51, m = 1.9) corresponds to volumetric nucleation with two-dimensional growth.