Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors-Reference-Cited by-同舟云学术

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Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

Published:2010-06 Issue:6 Volume:117 Page:941-944
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Kim D.Y.¹,Kim G.S.¹,Jeon S.M.¹,Cho M.Y.¹,Choi H.Y.¹,Kim M.S.¹,Lee D.-Y.²,Kim J.S.³,Kim J.S.⁴,Eom G.-S.⁵,Leem J.-Y.¹

Affiliation:

1. Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

2. Lighting Module Research and Development, Samsung Electro-Mechanics Co., Ltd., Suwon 443-373, Korea

3. Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Korea

4. Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea

5. Division of General Education, Uiduk University, Gyeongju 780-713, Korea

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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