Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region-Reference-Cited by-同舟云学术

Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

Published:2016-01 Issue:1a Volume:129 Page:A-36-A-40
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Romanyuk V.¹,Dmitruk N.¹,Karpyna V.²,Lashkarev G.²,Popovych V.²,Dranchuk M.²,Pietruszka R.³,Godlewski M.³,Dovbeshko G.⁴,Timofeeva I.²,Kondratenko O.¹,Taborska, M.¹,Ievtushenko A.²

Affiliation:

1. Institute of Semiconductor Physics, NASU, prosp. Nauky 45, Kyiv, Ukraine

2. Institute for Problems of Material Science, NASU, Krzhizhanovskogo 3, Kyiv, Ukraine

3. Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

4. Institute of Physics, NASU, prosp. Nauky 46, Kyiv, Ukraine

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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