An Analysis of Germanium-Silicon/Silicon Strained Superlattice Structure Using Convergent Beam Electron Diffraction-Reference-Cited by-同舟云学术

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An Analysis of Germanium-Silicon/Silicon Strained Superlattice Structure Using Convergent Beam Electron Diffraction

Published:2016-01-28 Issue:2 Volume:52 Page:162-171
ISSN:0039-2103
Container-title:Strain
language:en
Short-container-title:Strain

Author:

Mogili N. V. V.¹,Tanner D. A.¹,Nakahara S.²

Affiliation:

1. Materials and Surface Science Institute and the Department of Design and Manufacturing Technology; University of Limerick; Limerick Ireland

2. Materials and Surface Science Institute and the Department of Physics and Energy; University of Limerick; Limerick Ireland

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/str.12176/fullpdf

Reference16 articles.

1. Strained-layer InGaAs quantum-well heterostructure lasers

2. Strained-Layer Epitaxy of Germanium-Silicon Alloys

3. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

4. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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1. Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy;Electron;2024-04-04

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