Affiliation:
1. Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province Institute of Optoelectronic Materials and Devices China Jiliang University Hangzhou People's Republic of China
2. Special Equipment Institute Hangzhou Vocational & Technical College Hangzhou People's Republic of China
Abstract
AbstractRecently, there has been a growing demand for broadband near‐infrared (NIR) phosphor. The paper proposes a novel Cr3+ doped Ca2Y3Sb3O14 phosphor through basic research of Ca2Ln3Sb3O14: Cr3+ (Ln = Sc, Lu, and Y) phosphor. Under 467 nm excitation, Ca2Y3Sb3O14: Cr3+ phosphor shows a broad NIR emission band (650–950 nm) centered at 776 nm with a full width at half‐maximum of 110 nm. The optimal Cr3+ doping concentration is 0.05, with an internal quantum efficiency of 78%. Meanwhile, the photoluminescence emission intensity at 373 K remains 61.3% of that at room temperature. Using phosphor‐in‐glass technology, a glass–ceramic plate showed a slight improvement in its thermal stability compared to the pure phosphor. Combining Ca2Y3Sb3O14: 0.05Cr3+ phosphor with a commercial blue‐light‐emitting chip presents an output power of 44.51 mW with a photoelectric conversion efficiency of 14.78% at a drive current of 100 mA. These results suggest that the Ca2Y3Sb3O14: Cr3+ phosphor has great potential in the pc‐light‐emitting diodes.
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Ceramics and Composites
Cited by
3 articles.
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