Effect of Bottom Electrode Materials and Annealing Treatments on the Electrical Characteristics of Ba0.47Sr0.53TiO3 Film Capacitors-Reference-Cited by-同舟云学术

Effect of Bottom Electrode Materials and Annealing Treatments on the Electrical Characteristics of Ba0.47Sr0.53TiO3 Film Capacitors

Published:2004-12-22 Issue:2 Volume:82 Page:351-358
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:

Author:

Tsai Ming-Shiahn,Sun Shi-Chung,Tseng Tseung-Yuen

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.1999.tb20069.x/fullpdf

Reference37 articles.

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3. ULSI DRAM Technology with Ba0.7Sr0.3TiO3 Film of 1.3 nm Equivalent SiO2 Thickness and 10-9 (A/cm2) Leakage Current;Fujii;IEDM Tech. Dig.,1992

4. A Stacked Capacitor with BaxSr1-xTiO3 for 256M DRAM;Koyama;IEDM Tech. Dig.,1991

5. Fabrication and Characterization of Electroceramic Thin Films for Semiconductor Memory Applications;Tseng;Proc. Int. Electron Devices Mater. Symp.,1996

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