High Dielectric Properties of Bi1.5Zn1.0Nb1.5O7Thin Films Fabricated at Room Temperature-Reference-Cited by-同舟云学术

High Dielectric Properties of Bi1.5Zn1.0Nb1.5O7Thin Films Fabricated at Room Temperature

Published:2008-10 Issue:10 Volume:91 Page:3399-3401
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:

Author:

Ryu Jungho,Kim Kun-Young,Choi Jong-Jin,Hahn Byung-Dong,Yoon Woon-Ha,Park Dong-Soo,Park Chan

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2008.02539.x/fullpdf

Reference14 articles.

1. Bismuth-Zinc-Niobate Embedded Capacitors Grown at Room Temperature for Printed Circuit Board Applications;Park,2006

2. Study on Epoxy/BaTiO3 Composite Embedded Capacitor Films (ECFs) for Organic Substrate Applications;Cho,2004

3. Ca-Doped Lead Zirconate Titanate Thin Film Capacitors on Base Metal Nickel on Copper Foil;Kim,2004

4. Lead Zirconate Titanate Thin Films Directly on Copper Electrodes for Ferroelectric, Dielectric and Piezoelectric Applications;Kingon,2005

5. Electrical Properties of Bi2Mg2/3Nb4/3O7 (BMN) Pyrochlore Thin Films Deposited on Pt and Cu Metal at Low-Temperatures for Embedded Capacitor Applications;Xian,2007

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