Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2004.01153.x/fullpdf
Reference24 articles.
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2. Influence of Dislocation Density on Recombination at Grain Boundaries in Multycrystalline Silicon;Seifert;Semicond. Sci. Technol.,1993
3. On the Electrical Activity of First- and Second-Order Twin Boundaries in Silicon;Cavalcoli;Semicond. Sci. Technol.,1995
4. Relationship between Electrical Activity and Grain Boundary Structural Configuration in Polycrystalline Silicon;Wang;Interface Sci.,1999
5. The Relationship between Crystal Misorientation and Conductive Mode Contrast of Grain Boundaries in Additive-Free Zinc Oxide;Russell;J. Mater. Sci.,1997
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