Affiliation:
1. School of Materials Science and Engineering, Jiangsu Key Laboratory for Advanced Metallic Materials Southeast University Nanjing China
2. School of Mechanical and Electronic Engineering Nanjing Forestry University Nanjing China
Abstract
AbstractFar‐red‐emitting (700−740 nm) phosphors are essential for the fabrication of plant lighting phosphor‐converted light‐emitting diodes (pc‐LEDs). However, the development of highly efficient, thermally stable, and spectrally matched far‐red phosphors still remains a challenge. Herein, far‐red GdAlO3:Cr3+ (GAO:Cr3+) phosphors were synthesized via solid‐state reaction and investigated for plant lighting pc‐LED applications. A low‐temperature flux‐assisted synthesis strategy was adopted to improve the crystalline quality, suppress the defect formation, and maintain the valence state of Cr3+ in the phosphors, finally leading to significant luminescent enhancement (∼10 times). The GAO:Cr3+ phosphors show the 2E sharp‐line emissions around 730 nm, which is highly matched with the far‐red absorption band of plants. The optimized GAO:0.01Cr3+ phosphor exhibits a high internal quantum efficiency of 98.3% and zero thermal quenching even up to 250°C. The fabricated pc‐LED can generate an overall output power of 78.1 mW at 100 mA drive current, with a high energy conversion efficiency of 25.3%. The findings demonstrate the great potential of GAO:Cr3+ as far‐red‐emitting phosphor materials for plant growth pc‐LED applications.
Funder
Transformation Program of Scientific and Technological Achievements of Jiangsu Province