Electrical Properties of the Ta-RuO2 Diffusion Barrier for High-Density Memory Devices
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.2000.tb01301.x/fullpdf
Reference8 articles.
1. Excimer Laser Ablated Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Applications;Roy;Appl. Phys. Lett.,1993
2. Pt/TiN Electrodes for Stacked Memory with Polysilicon Plug Utilizing PZT Films;Kushida-Abdelghafar;Integr. Ferroelectr.,1996
3. Barrier Effect of TaSiN Layer for Oxygen Diffusion;Hara;J. Electrochem. Soc.,1996
4. Microcrystalline Oxide-Incorporated New Diffusion Barrier for Dynamic Random Access Memory and Ferroelectric Random Access Memory Capacitor Electrode;Yoon;J. Vac. Sci. Technol. A,1997
5. Investigation of Pt/Ta Diffusion Barrier Using Hybrid Conductive Oxide (RuO2) for High Dielectric Applications;Yoon;J. Vac. Sci. Technol. B,1998
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2. Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes;Journal of Electronic Materials;2003-08
3. Oxygen diffusion barriers using a new sacrificial design concept for future high-density memory devices;Applied Physics A: Materials Science & Processing;2003-05-01
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