Affiliation:
1. Saitama Institute of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Reference19 articles.
1. (1) R. N. Bhattacharya, M. A. Contreras, and G. Teeter : “18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical- Bath-Deposited ZnS(O,OH)”, Jpn. J. Appl. Phys., Vol. 43, L1475 (2004)
2. (2) K. Koike, K. Hama, I. Nakashima, S. Sasa, M. Inoue, and M. Yano : “Molecular Beam Epitaxial Growth of Al-doped ZnMgO Alloy Films for Modulation-doped ZnO/ZnMgO Heterostructures”, Jpn. J. Appl. Phys., Vol. 44, p. 3822 (2005)
3. (3) W. I. Park, G. Yi, and H. M. Jang : “Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO (0<x<0.49) thin films”, Appl. Phys. Lett., Vol. 79, p. 2022 (2001)
4. (4) A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki : “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO”, Nature. Mater., Vol. 4, p. 42 (2005)
5. (5) A. Onodera, N. Tamaki, Y. Kawamura, T. Sawada, and H. Yamashita : “Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-Doped ZnO”, Jpn. J. Appl. Phys., Vol. 35, p. 5160 (1996)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献