The Effects of Si Addition on Electrical Degradation of ZnO Varistors-Reference-Cited by-同舟云学术

The Effects of Si Addition on Electrical Degradation of ZnO Varistors

Published:2004 Issue:2 Volume:124 Page:189-195
ISSN:0385-4205
Container-title:IEEJ Transactions on Fundamentals and Materials
language:en
Short-container-title:IEEJ Trans. FM

Author:

Satoi Yohei¹,Hirai Hideki¹,Yoshino Hiroyuki¹,Yoshikado Shinzo¹

Affiliation:

1. Department of Electronics, Doshisha University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejfms/124/2/124_2_189/_pdf

Reference13 articles.

1. (1) G. D. Mahan : “Intrinsic Defects in ZnO Varistors”, J. Appl. Phys., Vol. 54, pp. 3825-3832 (1983)

2. (2) T. Ishikawa and S. Yoshikado : “The Effects of Additives on Electrical Degradation for ZnO Varistors”, T. IEE Japan, Vol. 121-A, No. 6, pp. 554-560 (2001-6) (in Japanese)

3. 石川貴規·吉門進三：「ZnOバリスタの不純物の課電劣化への影響」，電学論A，121，6，pp. 554-560 (2001-6)

4. (3) K. Miyamoto, H. Miyamoto, and A. Iga : “Effect of Al-addition on the V-I Characteristics of ZnO Varistors Sintered at Low Temperature”, Extended Abstract of the 20th Electronics Division Meeting, p. 56 (2000)

5. (4) Y. Satoi and S. Yoshikado : “The Effects of Al on Electrical Degradation of ZnO Varistors”, IEEJ Trans. FM, Vol. 123, No. 2, pp. 139-145 (2003-2) (in Japanese)

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