Trends in High-Power Semiconductor Lasers and Their Application-Reference-Cited by-同舟云学术

Trends in High-Power Semiconductor Lasers and Their Application

Published:2005 Issue:2 Volume:125 Page:160-168
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Gonda Shun-ichi¹,Hirayama Hideki²,Kawamura Yuichi³

Affiliation:

1. Fukui University of Technology

2. RIKEN

3. Osaka Prefecture University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/125/2/125_2_160/_pdf

Reference26 articles.

1. (4) Q. Yi, B. Baoxue, G. Xin, Z. Xingde, and S. Jiawei : “High-power, low-beam-divergence 980nm lasr arrays with nonabsorbing facets”, J. Crystal Growth, Vol. 227-228, pp. 202-205 (2001)

2. (5) K. Paschke, B. Sumpf, F. Dittmar, G. Ebert, J. Fricke, A. Knauer, S. Schwertfeger, H. Benzel, and G. Trankie : “Nearly-diffraction limited 980nm taperd diode lasers with an output power of 6. 7W”, Digest of 19^th Intl. Semiconductor Laser Conference, pp. 43-44 (2004)

3. (6) M. Sakamoto, J. G. Endritz, and D. R. Scifres : “20W CW monolithic AlGaAs (810nm) laser diode arrays”, Electronics Lett., Vol. 28, No. 2, pp. 178-180 (1992)

4. (8) H. Horie, N. Arai, Y. Mitsuishi, N. Komuro, H. Kaneda, H. Gotoh, M. Usami, and Y. Matsushima : “Greater than 500-mW CW kink-free single transverse-mode operation of weakly index guided buried-stripe type 980-nm laser diodes”, IEEE Photonics Technol. Lett., Vol. 12, No. 10, pp. 1304-1306 (2000)

5. (9) T. Asano, T. Tojyo, T. Mizuno, M. Takeya, S. Ikeda, K. Shibuya, T. Hino, S. Uchida, and M. Ikeda : “100-mW kink-free blue violet laser diodes with low aspect ratio, IEEE J. Quantum Electronics, Vol. 39, No. 1, pp. 135-140 (2003)