Improvement in Device Performances of InP-Based HEMTs by Thinning a Barrier Layer-Reference-Cited by-同舟云学术

Improvement in Device Performances of InP-Based HEMTs by Thinning a Barrier Layer

Published:2008 Issue:6 Volume:128 Page:861-864
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Hara Naoki¹,Takahashi Tsuyoshi¹,Makiyama Kozo¹,Ohki Tosihiro²

Affiliation:

1. Fujitsu Limited

2. Fujitsu Laboratories Ltd.

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

http://www.jstage.jst.go.jp/article/ieejeiss/128/6/128_6_861/_pdf

Reference8 articles.

1. (1) Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura : “Pseudomorphic In_0.52Al_0.48As/ In_0.7Ga_0.3As HEMTs with an ultrafast f_T of 562 GHz”, IEEE Electron Devices Lett., Vol. 23, No. 10, pp. 573-575 (2002)

2. (2) H. Matsuzaki, T. Maruyama, T. Kosugi, H. Takahashi, M. Tokumitsu, and T. Enoki : “Laterally scaled down tiered-edge Ohmic structure of InP-based HEMTs for 2-S/mm g_m and 500-GHz f_T”, Technical Digest IEEE IEDM, pp. 795-798, Washington, USA (2005)

3. (3) Y. Nakasha, Y. Kawano, T. Suzuki, T. Ohki, T. Takahashi, K. Makiyama, T. Hirose, and N. Hara : “A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems”, Ext. Abstract 2007 Solid-State Devices and Materials, pp. 792-793, Tsukuba, Japan (2007)

4. (4) M. Sato, T. Hirose, T. Ohki, H. Sato, K. Sawaya, and K. Mizuno : “94-GHz Band High-Gain and Low-Noise Amplifier Using InP-HEMTs for Passive Millimeter Wave Imager”, 2007 Int. Microwave Symp. Digest, pp. 1775-1778, Honolulu, USA (2007)

5. (5) T. Takahashi, M. Sato, K. Makiyama, T. Hirose, and N. Hara : “InAlAs/InGaAs HEMT with Minimum Noise Figure of 1.0 dB at 94 GHz”, Proc. 2007 Int. Conf. on Indium Phosphide and Related Materials, pp. 55-58, Matsue, Japan (2007)