Technology Introduction and Future Prospects of Piezoelectrically Transduced Temperature-compensated Silicon MEMS Resonators
Author:
Affiliation:
1. Kyocera Technologies Ltd.
2. 京セラ（株）
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Link
https://www.jstage.jst.go.jp/article/ieejjournal/144/2/144_72/_pdf
Reference11 articles.
1. (1) J. J. Hall : “Electronic Effects in the Elastic Constants of n-Type Silicon, ”Physical Review, Vol.161, No.3, p.756 (1967) dx.doi.org/10.1103/PhysRev.161.756
2. (2) R. W. Keyes : “Electronic Effects in the Elastic Properties of Semiconductors”, in Solid State Physics : Advances in Research and Applications, ed. by F. Seitz and D. Turnbull. Academic Press, Vol.20, pp.37-90 (1967)
3. (3) A. Hajjam, A. Rahafrooz, and S. Pourkamali : “Sub-100 ppb/C Temperature Stability in Thermally Actuated High Frequency Silicon Resonators via Degenerate Phosphorous Doping and Bias Current Optimization”, in Proc. IEEE International Electron Device Meeting (IEDM) , pp.7.5.1-7.5.4 (2010)
4. (4) T. Pensala, A. Jaakkola, M. Prunnila, J. Dekker, “Temperature compensation of silicon MEMS resonators by heavy doping”, Proc. IEEE International Ultrasonics Symposium, pp.1952-1955 (2011)
5. (5) A. K. Samarao, G. Casinovi, and F. Ayazi : “Passive TCF Compensation in High Q Silicon Micromechanical Resonators”, in Proc. IEEE International Conference on Micro Electro Mechanical Systems, Hong Kong, pp.116-119 (2010) dx.doi.org/10.1109/MEMSYS.2010.5442553
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