Improved GaAs metal-oxide semiconductor solar cells with a spin-on oxide layer

Abstract

A thin native oxide layer grown on GaAs is known to increase the Schottky barrier solar cell efficiency by 60% over a baseline cell, due mainly to a higher open-circuit voltage. A physically-deposited oxide layer shows better efficiency and stability. A spin-on oxide layer is found to cause a higher relative increase in efficiency due to an increase in open-circuit voltage, as well as in short-circuit current.