Drift velocity of holes in germanium and silicon

Abstract

The displaced Maxwellian distribution function as it applies to semiconductors with lattice limited scattering is discussed. It is shown that good agreement between theoretical results and experimental data for the drift velocity can be obtained if the phonon coupling constants are lowered somewhat from their correct values. Calculations are presented for p-type germanium and silicon and it is shown that the key factor that must be considered in both materials is the non-parabolicity of the valence bands.