Investigation of electrodeposited CuInSe2 films

Abstract

After a brief review of CuInSe2 films prepared using an electrophoretic technique, results obtained by an electrochemical deposition method will be described. The electrophoretic technique, which is simple, was first investigated and found to be unsuitable for CuInSe2-film deposition. Using the electrochemical deposition method, we obtained uniform and homogeneous CuInSe2 films. The quality of the films was then determined by scanning electron microscopy, electron-probe microanalysis, X-ray diffraction, and secondary-ion mass spectroscopy. Heterojunction cells of the form CdS–CuInSe2 were finally fabricated using the electrodeposited films. The devices showed an active-area AM1 short-circuit current density of more than 30 mA∙cm−2 and a Voc of about 0.2 V.