Epitaxy of III–V semiconductors

Abstract

This paper is concerned with the control of the epitaxial deposition of III–V materials by means of techniques using metal organic group III compounds and group V hydrides as starting materials: metal-organic vapour-phase epitaxy and metal-organic molecular-beam epitaxy. Such control is essential with regards to intentional and background doping and for the sake of the uniformity of the film properties of binary semiconductors. In systems containing ternary and quaternary materials, there is the further requirement of compositional control and lattice matching. In addition to the equipment aspects, this paper will discuss the contributions to be expected of novel precursors and the control problem related to selective area growth. Finally, the growth of multiple quantum well structures will be reviewed as a test case for mastering epitaxial deposition.