Author:
Jay-Gerin J.-P.,Caron L. G.,Aubin M. J.
Abstract
The electrical resistivity of Cd3As2 at 77 and 300 K has been calculated as a function of electron concentration. The contribution of ionized impurities, acoustic and optic phonons to the electronic scattering was evaluated taking into account the HgTe-type inverted band structure of this material. A fit of these results to the experimental ones appearing in the literature yields a high-frequency dielectric constant εx of 12.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
13 articles.
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