Influence of temperature on phosphorus ion behavior during silicon bombardment

Abstract

Silicon samples have been bombarded with 20-keV phosphorus ions along the easy channeling direction. Annealing temperatures and activation energies of the defects created during irradiation have been determined using a Corbino structure. The nature of the defects varies as a function of depth. Large clusters exist in the superficial layers when mainly E and A centers have been identified in the channeled part of the profile. The influence of these defects on ion ranges is shown. The most important consequence of this study is to indicate a useful temperature range, between 550 and 650 °C, for phosphorus implantation into silicon.