Abstract
Two new systems of SiH and SiD in the regions around 3 250 Å and 2 050 Å in addition to the well-known 2Δ−2Π system have been recorded in absorption and their rotational analysis (except for the 2Δ−2Π system of SiH) has been carried out. The new states are 2Σ+ at T0 = 30 974.69 cm−1 and 2Δ at T0 = 48 603.46 cm−1. The rotational constants for all the states known in SiD have been determined. The upper limit of the dissociation energy of SiH has been fixed at 24 680 cm−1 by predissociation.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
52 articles.
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5. Theoretical Study of the Heats of Formation of Small Silicon-Containing Compounds;The Journal of Physical Chemistry A;1999-07-23