DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2-Reference-Cited by-同舟云学术

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DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2

Published:2015-08 Issue:4 Volume:67 Page:654-657
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Yoon Hyung Sup,Min Byoung Gue,Lee Jong Min,Kang Dong Min,Ahn Ho Kyun,Kim Sung Il,Ju Chul Won,Kim Hae Cheon,Lim Jong Won

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.67.654.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study;Superlattices and Microstructures;2021-12

2. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications;Journal of the Korean Physical Society;2017-09

3. Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing;Journal of the Korean Physical Society;2017-09

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