In-Surfactant Time Dependent Properties of InGaN/GaN Multiple Quantum-Wells Grown by Using MOCVD
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Published:2008-10-15
Issue:4
Volume:53
Page:1939-1944
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ISSN:0374-4884
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Container-title:Journal of the Korean Physical Society
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language:en
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Short-container-title:J. Korean Phy. Soc.
Author:
Kim T. S.,Park J. Y.,Jeong T. S.,Kang S.,Shim K. H.,Hong C.-H.
Publisher
Korean Physical Society
Subject
General Physics and Astronomy