Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs
Author:
Publisher
The Korean Vacuum Society
Subject
Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)
Link
http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO201501255363139.pdf
Reference5 articles.
1. High-performance InAs quantum-dot lasers near 1.3 μm
2. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
3. Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
4. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
5. Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices
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